st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1 description st n210d uses trench mosfet technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration (d - pak) to - 252 to - 251 part marking y year code a date code b process code feature l 30 v/ 20 a, r ds(on) = 3 m @v gs = 10v l 30 v/ 20 a, r ds(on) = 4 m @v gs = 4.5 v l super high density cell design for extremely low r ds(on) l exceptional on - resistance and maximum dc current capability l t o - 252,to - 251 package design
st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage vdss 30 v gate - source voltage vgss ?0 v continuous drain current (tj=150 ) t a =25 t a = 100 id 80 55 a pulsed drain current idm 360 a continuous source current (diode conduction) is 23 a power dissipation t a =25 pd 150 w operation junction temperature tj 1 75 storgae temperature range tstg - 55/1 75 thermal resistance - junction to ambient r ja 1 10 /w
st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v,id= 250 u a 3 0 v gate threshold voltage v gs(th) v ds =v gs ,id= 2 50ua 1 .3 2.5 v gate leakage current i gss v ds =0v,v gs =?0v ?00 na zero gate voltage drain current i dss v ds = 30 v,v gs =0v 1 ua v ds = 3 0 v,v gs =0v t j = 55 5 drain - source on - resistance r ds(on) v g s =10v,i d = 20 a v gs = 4.5 v,i d = 20 a 2.4 3.7 3 4.7 m forward transconductance gfs v ds =5v,i d = 2 0 a 80 s diode forward voltage v sd i s = 1 .0 a,v gs =0v 1. 0 v dynamic total gate charge q g v ds = 15 v,v gs = 10v i d 2 0 a 120 nc gate - source charge q gs 30 gate - drain charge q gd 40 input capacitance c iss v ds = 1 5 v,v gs =0v f=1mhz 7780 pf output capacitance c oss 180 5 reverse transfer c apacitance c rss 435 turn - on time t d(on) tr v d s = 15 v,r l = 0.7 5 v gs = 10v , r g en = 3 12 ns 11 turn - off t ime t d(off) tf 40 12
st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1 typical characterictics
st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1 typical characterictics
st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1 typical characterictics
st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1
st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1
st n210d n channel enhancement mode mosfet 80 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 9 , stanson corp. st 21 0 d 2016 v1 to - 252 - 2l package outline sop - 8p
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